防止IGBT测试短路烧针的改进方法研究

The Investigation of IGBT Test Short-preventing Improvement

绝缘栅双极型晶体管(IGBT)是一种混合型电力电子器件,具有工作频率高、驱动电路简单、电流大、电压高、耐用等优点,广泛应用于工业控制、智能电网、轨道交通以及家电等领域。为提高封装阶段的成品率,晶圆代工厂大都会进行硅片级的静态参数测试,而在测试过程中,测试针卡(probe)有时会因硅片生产过程中引入的缺陷导致的短路而烧毁。通过对测试程序的优化,从根本上消除了测试过程中烧毁针卡的可能性。

IGBT is a hybrid power electronic device, and it has been widely used in industrial control, smart grid, rail transportation, household appliances and other fields due to its appealing features of high working frequency, simple driving circuit, peak current and blocking voltage capability and ruggedness. In order to improve package yield, foundry often probe wafers before shipping, but sometimes, the probe will be damaged due to chip short which caused by defect. This paper is aiming to solve probe-damage problem by optimizing the test program.