C波段400W GaN内匹配功率管研制

C-Band 400 W GaN Internally Matched Power Transistor

基于AlGaN/GaNHEMT工艺制作了大栅宽GaN高电子迁移率晶体管(HEMT)管芯,通过负载牵引及建模技术提取了管芯的输入阻抗、输出阻抗。设计中首先通过L-C网络提升了管芯的输入阻抗、输出阻抗,并通过微带多节阻抗变换器实现了宽带功率分配器及合成器电路的制作,同时还加入了稳定网络,最终实现了50Ω输入输出阻抗匹配。该大功率GaNHEMT内匹配器件采用四胞管芯功率合成技术,总栅宽为4×16mm。在50V漏电压、1ms周期、10%占空比的测试条件下及5.3~5.9GHz频率范围内,输出功率均高于56dBm,最高达到56.5dBm,功率增益均大于12dB,带内功率附加效率超过48.2%。

Based on the AlGaN/GaN HEMT process, the large gate-width GaN high electron mobility transistor（HEMT） was fabricated. The input/output impedances have been extracted by load-pull measurement and modeling technique. L-C networks were firstly designed to improve the input and output impedances of the transistor, and then the wideband power combiner and divider were designed by using series sections of micro-strip lines, also the stable network has been included, finally the 50 Ω input/output impedance matching has been realized. The high power internally matched power device was combined by four paralleled GaN HEMT dies, the total gate-width is 4 mm×16 mm. Under the drain voltage of 50 V and the pulse condition（1 ms,10%）, during the operation frequency band of 5.3 GHz to 5.9 GHz, the output power exceed 56 d Bm, and highest is about 56.5 d Bm,and within the whole band, PAE is more than 48.2%,and the power gain is large than 12 d B.