硒化温度对CIGS/Mo界面微观结构和化学成分的影响

Influences of the Selenization Temperature on the Microstructures and Chemical Compositions of CIGS/Mo Interface

采用磁控溅射和硒化热处理的方法在钠钙玻璃上沉积了一系列铜铟镓硒(CIGS)薄膜。利用X射线衍射(XRD)、高分辨透射电子显微术(HR-TEM)、高角环形暗场相(HAADF)和X射线能量散射光谱(EDS)元素面扫描分析等表征手段,研究了铜铟镓硒/钼(CIGS/Mo)界面特性随硒化温度的变化规律。结果表明,400℃硒化的薄膜中CIGS与Mo层之间界面清晰;当硒化温度为500℃时,CIGS/Mo界面上出现MoSe_2薄层和富Na的二次相纳米颗粒;当硒化温度升至600℃时,MoSe_2层增厚,同时富Na二次相纳米颗粒连接形成不平整的条带,CIGS/Mo界面演变为CIGS/富Na的二次相/MoSe_2/Mo多层结构。此外,MoSe_2的取向对富Na二次相的形成有一定的影响。

CuInxGa1-xSe2（CIGS）films were deposited on soda-lime glass by magnetron sputtering and selenization heat treatments.X-ray diffraction（XRD）,high resolution transmission microscopy（HR-TEM）,high-angle annular dark field（HAADF）image and X-ray energy dispersive spectrum（EDS）mapping were utilized to analyze the influence of selenization temperature on the characters of CIGS/Mo interface.It was found that CIGS/Mo interface was clear when the selenization temperature was 400 ℃.A MoSe_2 thin layer and Na-riched second phase nanoparticles were detected at CIGS/Mo interface at 500 ℃.The MoSe_2 layer became thicker and the Na-riched nanoparticles grew into a curved band at 600 ℃,therefore the CIGS/Mo interface developed into a multilayered structure of CIGS/Na-riched second phase/MoSe_2/Mo.In addition,the orientations of MoSe_2 grains may effect on the formation of second phases.