SiC MOSFET短路特性

Short-Circuit Characteristics of SiC MOSFET

为确保碳化硅(SiC)功率器件在过载、短路等工况下能安全可靠地工作,必须充分认识SiC器件的短路机理。首先对SiC MOSFET硬开关短路故障下短路电流原理进行了分析,在此基础上对不同电路参数对SiC MOSFET短路特性的影响进行了对比分析,揭示了短路特性的关键影响因素,并对Si与SiC MOSFET短路能力和器件恶化机理进行了对比分析,从而为设计SiC MOSFET短路保护电路提供一定的指导。

To ensure the safety and reliablity of silicon carbide（SiC）power devices in the overload,short circuit and other conditions,the short circuit mechanism of SiC devices must be fully understood.Firstly,the mechanism of short-circuit current is analyzed in detail under hard-switching fault.Then,the influence of different circuit parameters on short circuit characteristics of SiC MOSFET is analyzed and compared.The key factors influencing the short-circuit characteristics are further revealed,and the short circuit capacity and device deterioration mechanism of Si and SiC MOSFET are compared and analyzed.The paper provides a guidance for designing short-circuit protection circuit of SiC MOSFET to some extent.