基于聚3,4-乙撑二氧噻吩:聚苯乙烯磺酸盐薄膜的忆阻元件特性分析

Analysis of Resistive Switching Behavior Based on PEDOT:PSS Film

采用聚3,4-乙撑二氧噻吩:聚苯乙烯磺酸盐(PEDOT:PSS)作为存储层构建了ITO/PEDOT:PSS/Al的三明治结构的忆阻元件。利用半导体参数分析仪对该元件的忆阻特性进行了分析,实验结果表明:该元件具有双稳态阻变特性,并且具有非挥发型Flash存储特性,并展现了良好的数据保持特性和耐久特性。在双对数坐标系中分别对低阻态和高阻态的阻变转换机制进行了数据拟合,低阻态载流子传输为欧姆传导机制,高阻态载流子传输为空间电荷限制电流机制。

Resistive switching device based on ITO/PEDOT： PSS/Al structure is fabricated to explore its resistive switching characteristics.The resistive switching behavior is analyzed by semiconductor parameter analyzer. The experiment results show that the ITO/PEDOT： PSS/Al devices have Flash storage characteristics,and good retention and endurance property.The I-V curves fitting results in the double logarithm coordinate show that the resistive switching mechanisms of the two states are different： the low resistance state is due to Ohmic conduction mechanism,the high resistance state is due to space-charge limited current mechanism.