摘要
针对激光引信小型化和高性能的工作需求，设计了一种新型半导体激光器（LD）驱动电路。电路采用高速MOSFET作为开关器件，为激光器提供脉宽窄、上升时间短、峰值电流大的驱动脉冲。建立了相应的驱动电路模型，设计制作了尺寸为19mm×10mm的驱动电路，仿真和实验分析了供电电源、充电电容和阻尼电阻对驱动脉冲的影响。并根据仿真和实验结果选取最佳的电路参数，在此条件下驱动脉冲的脉宽为8．6ns、前沿上升时间为4ns、峰值电流为39A。该电路为激光引信探测性能的提高提供参考。
Aiming at the miniaturization and high performance requirements of laser fuze, a novel driving circuit was designed to drive the pulse laser diode. The circuit used high-speed MOSFET as the switching element to generate a driving pulse with narrow pulse width, short rise time and large peak current for laser diode. A corresponding driving circuit model was established. The effects of supply voltage, energy storage capacitor and damping resistor on the performance of driving pulse were analyzed by simulation and experiment. A driving circuit with the size of 19 mm×10 mm was designed and the optimal circuit parameters were selected. The driving circuit provides a driving pulse with pulse width of 8.6 ns, rise time of 4 ns and peak current of 39 A. The design provides an effective improvement of detection performance of laser fuze.
作者
陈杉杉
张合
徐孝彬
Chen Shanshan;Zhang He;Xu Xiaobin(ZNDY of Ministerial Key Laboratory,Nanjing University of Science and Technology,Nanjing 210094,China;College of Mechanical and Electrical Engineering,Hohai University,Changzhou 213022,China)
出处
《红外与激光工程》
EI
CSCD
北大核心
2018年第A01期16-22,共7页
Infrared and Laser Engineering
基金
武器装备预先研究项目（30107030802）
