ICP-MS法快速测定多晶硅表面八种金属杂质含量

Rapid Determination of Eight Kinds of Metal Impurities on the Surface of Polysilicon by ICP-MS Method

使用硝酸、氢氟酸、过氧化氢和水的混合溶液浸取多晶硅表面金属杂质,无需赶尽氢氟酸,采用配备耐氢氟酸惰性进样系统的ICP-MS直接测定多晶硅产品中钠、铝、钾、铁、铬、镍、铜和锌8种表面金属杂质含量,结果表明该方法具有简便、快速、准确等特点,加标回收率为84.0%~110.6%,相对标准偏差(RSD)为3.79%~11.96%,检出限为0.003 ng/g^0.018 ng/g。

Using a mixed solution of nitric acid,hydrofluoric acid,hydrogen peroxide and water leaching metal impurities on the surface of polysilicon,there＇ s no need to completely remove hydrofluoric acid,direct determination of eight kinds of metal impurities on the surface of polysilicon product sodium,aluminum,potassium,iron,chromium,nickel,copper and zinc with hydrofluoric acid resistant inert sample introduction system ICP-MS. The results show that this method is simple,rapid and accurate,the recovery in the range of 84% ~110. 6%,the relative standard deviation（ RSD） was 3. 79% ~ 11. 96%,and the detection limit of the method was 0. 003 ng/g ~ 0. 018 ng/g.