固态存储器短周期存取速度动态控制

Dynamic Control of Short Cycle Access Speed in Solid-state Memory

由于传统控制方法出现数据误码、存储内存不足问题,导致控制性能变差,为了解决该问题,需对固态存储器短周期存取速度进行动态控制;根据短周期存取速度控制原理,采用均衡加重技术,设计具有针对性的数据传输介质来解决数据误码问题;利用NANDFLASH双平面交替编程的分时加载操作方式,扩大存储内存;使用二级缓存方式对扩大后的内存数据进行缓存读取,根据多线组合指令动态控制缓存读取结果;通过实验结果得出,该方法最低误码率可达到5%,控制性能较好。

Due to the problem of data error and insufficient memory in traditional control methods,the control performance becomes worse.In order to solve this problem,we need to control the short period access speed of solid-state memory dynamically.According to the principle of short cycle access speed control,the balanced weighting technique is adopted to design a targeted data transmission medium to solve the problem of data error code.The storage memory is expanded by using the time-sharing operation mode of NANDFLASH double plane alternating programming.The two level caching method is used to read the enlarged memory data,and the results are dynamically controlled according to the multi line combination instruction.The experimental results show that the minimum error rate of the method can reach 5% and the control performance is good.