紫外辐照增强TiO_2纳米棒阵列薄膜氢气传感器性能研究

Enhancement of H_2 sensitivity of TiO_2 array thin film hydrogen sensor by UV irradiation

氢气传感器的研究对于未来绿色环保氢能源经济的发展有重要意义,提高氢气传感器在室温下对H_2响应的灵敏度是降低传感器成本、提升器件稳定性、拓展传感器应用领域的关键。基于TiO_2纳米棒阵列薄膜的H_2传感器具有成本低廉、易于制备、性能稳定等优点,前期研究已经实现器件的室温稳定工作,使用UV辐照TiO_2纳米棒阵列薄膜,采用XPS分析辐照前后薄膜表面的化学状态,研究了UV辐照对薄膜氢气敏感性能的影响。结果表明,UV辐照可以减少传感器表面污染,增加TiO_2纳米棒阵列薄膜表面氧空位,显著提高传感器对H_2的灵敏度。

The research of hydrogen sensor is of great significance to the development of green hydrogen energy economy in the future. Improving the sensitivity of hydrogen sensors to H 2 at room temperature is the key to reduce sensor cost, enhance device stability and expand the application area of sensors. Oxide based hydrogen sensors such as TiO 2 and SnO 2 have the advantages of low cost, easy fabrication and stable property. In this work, UV irradiation was adopted to help improving the sensitivity of the already exist room temperature working TiO 2 nano array thin film based hydrogen sensor. XPS was used to analyze the surface chemical state change of the thin film before and after ultraviolet irradiation. The effect of UV irradiation on the hydrogen sensitivity of thin films was studied. The results suggest that UV irradiation is benefit to elimination of surface contamination and to the increase of oxygen vacancy, which were considered as the reason for the enhancement of the sensitivity of hydrogen sensor in various H 2 concentration.