PECVD工艺对SiO_xN_y光学薄膜红外吸收特性的影响

Effects of PECVD Technology on Infrared Absorption Characteristics of SiO_xN_y Optical Thin-film

为了研究SiO_xN_y光学薄膜在红外区的应用特性.文中采用PECVD技术沉积折射率为1.60的SiO_xN_y光学薄膜,设计制造了相同制备工艺参数(功率、温度、压强)的不同薄膜厚度样片和不同制备工艺参数的相同厚度的两类实验样片,通过对SiO_xN_y薄膜的红外透过率进行测试,分析该薄膜的红外光谱特性.实验结果表明,SiOxNy光学薄膜在红外区(8~12μm)的红外窗口内有明显的吸收峰存在,在制造工艺参数不变时,薄膜吸收峰值大小随着厚度的增加而增大,波长变化范围为9~11.5μm;不同的SiO_xN_y薄膜制备工艺参数对该薄膜吸收峰的峰值大小和位置的影响不同,主要波长变化范围为10~11.5μm.

The paper studies the application characteristics of SiOxNy optical thin-film in the infrared region.The PECVD technology was used to deposit SiOxNyoptical thin film whose refractive index is 1.60.Two kinds of experimental samples were designed and manufactured,one with the same preparation parameters（power,temperature and pressure）but different thickness,and the other with different preparation parameters but the same thickness.Through testing the infrared transmittance of the SiOxNy thin-film,its infrared spectrum characteristics were analyzed.The experimental results show that the SiOxNy optical thin-film has obvious absorption peaks in the infrared window of the infrared region（8~12μm）.When the manufacturing process parameters are kept unchanged,the absorption peak of the thin-film increases with the thickness and the wavelength changes from 9 to 11.5μm.Different processing parameters exert different influence on the size and position of the absorption peaks.The main wavelength changes between 10 and 11.5μm.