GaN基光子晶体LED的Purcell效应

Research on Purcell Effect of GaN-based Photonic Crystal LED

针对目前商用LED光源带宽较窄的问题,我们引入光子晶体结构提高LED的调制带宽。首先使用时域有限差分法(FDTD)仿真LED外延结构对带宽的影响,然后在正装结构中引入光子晶体结构,并仿真光子晶体的周期、高度和占空比对带宽的影响,最后实验上制备了周期600 nm,占空比0.58的光子晶体LED。仿真结果表明:引入光子晶体结构的LED,带宽可以得到有效提升;当光子晶体周期为600 nm,占空比0.5时,Purcell因子为1.2,相比普通平片LED,带宽提高8%。实验结果显示:光子寿命减小5.9%,Purcell因子达到1.06。在普通平面LED中引入光子晶体结构,可以提高光源的调制带宽。

The paper researches the photonic crystal light-emitting diode to improve modulation bandwidth.Firstly,optimization of the light-emitting diode epitaxial structures on the bandwidth are performed by using the finite difference time domain algorithm. Secondly,the influence of parameters of the photonic crystal on the bandwidth is simulated. Finally,the photonic crystal light-emitting diode with a period of 600 nm and a duty ratio of 0. 58 is made. The simulation results show that the bandwidth of the light-emitting diode with photonic crystal structure can be effectively improved. The Purcell factor reached 1. 2 when the photonic crystal light-emitting diode had the period of 600 nm and the duty cycle of 0. 5. The modulation bandwidth is enhanced by 8% compared to common light-emitting diode. The experimental results show that the photon lifetime decreased by 5. 9%,and the Purcell factor reached 1. 06. Photonic crystal light-emitting diode can improve the modulation bandwidth.