集成电路后段光刻胶去除技术进展

The Development of Photoresist Stripper in Integrate Circuit

光刻胶去除是集成电路制造的关键工艺之一。随着集成电路技术的发展,先后出现了铝钨金属连接、铜互联大马士革工艺,尤其是硬掩膜铜互联大马士革工艺的出现,对光刻胶去除工艺提出了极大的挑战。结合图形化工艺技术进展,溶剂类光刻胶去除剂、羟胺类光刻胶去除剂、含氟类半水性光刻胶去除剂、双氧水类水性光刻胶去除剂先后成为市场主流。以集成电路图形化工艺发展为主线,对不同种类光刻胶去除剂进行概括介绍,并分析其优缺点,为中国光刻胶去除技术发展提供借鉴意义。

Photoresist removal is a critical process in integrated circuit manufacturing. With semiconductor technology development, AlSiCu, AlCu and Cu damascene interconnect are adopted in micro-level, sub-micro level, 110 nm and beyond technology. To form BEOL（back-end of line） metal interconnect, different patterning processes are implemented, including wet etch, aluminum metal line and via dry etch, Cu damascene process and then Ti N hard mask etch, which need relevant photoresist strpper to meet various post etch residue removal requirements. Solvent-base stripper, hydroxylamine-base stripper, fluoridecontaining semi-aqueous stripper and H_2O_2-containing aqueous base stripper take a dominate role accordingly. The article introduces all of photoresist strippers in general, covers their merits and demerits, and then directs photoresist stripper development in China.