直流电弧等离子体法制备In(Sn)-O及Sn(In)(Sb)-O系纳米颗粒（英文）

Synthesis of In(Sn)-O and Sn(In)(Sb)-O System Nanoparticles Using DC Arc Plasma Method

采用一种新的直流电弧等离子体法,通过对熔融的金属进行爆破(或气化),制备出了单相SnO_2、In_2O_3纳米颗粒以及In_2O_3:Sn(ITO)、SnO_2:Sb(ATO)和SnO_2:In:Sb(IATO)多元复合纳米颗粒。XRD结果表明,所制备的SnO_2和In_2O_3基多元复合纳米颗粒均为单相结构,没有其它杂相;TEM结果表明,直流电弧等离子体所制备的单相纳米颗粒分散性好,尺寸20～50 nm。该法合成的纳米ITO和ATO颗粒所制备的ITO靶材和SnO_2电极密度高、电阻率低,表明所制备的ITO和ATO纳米颗粒可以应用于平板显示和导电电极领域。

A new DC arc plasma concept was proposed to produce metal oxide nanoparticles by metal melting, blasting or gasification processes. It was exemplified by the preparation of single phase nanoparticles SnO_2,In_2 O_3 and SnO_2, In_2 O_3-based composite nanoparticles such as In2 O3：Sn（ITO）,SnO_2：Sb（ATO） and SnO_2：In：Sb（IATO）. X-ray diffraction（XRD） indicates that the doped SnO_2 and In_2 O_3 are single phase and there is no other secondary phase. The results of transmission electron microscopy（TEM）show that for the prepared single phase nanoparticles with good dispersion, the particle size ranges from 20 to 50 nm. The prepared ITO and ATO nanoparticles were utilized in ITO target and ATO electrode, and their density and electrical properties were tested.The prepared ITO target and ATO electrode have high density and low resistivity, and the ITO target has good film-forming effect,which implies that the ITO and ATO nanoparticles prepared by DC arc plasma can be applied to the field of flat panel displays and conductive electrodes.