模拟研究p型a-Si∶H对HIT太阳电池性能的影响

Simulation Study of Influences of p-type a-Si∶H on the performance of HIT Solar Cells

使用AFORS-HET软件模拟研究HIT太阳电池能带结构,讨论了发射区p型反转层的形成及影响因素,及其对电池性能的影响。结果表明：在n型单晶硅内,与p型非晶硅异质结界面处,形成p型反转层;p-Si∶H的掺杂浓度可调节费米能级位置,进而影响反转层的形成。HIT电池类似于p-n同质结电池,p型反转层作为太阳电池发射层,对太阳电池的性能起决定性作用。

The HIT solar cell was analyzed and designed with AFORS-HET simulation method.According to its energy band structure,it is found that a p-type inversion layer is produced in the n-type crystal silicon（c-Si）near the front heterojunction interface.The constitution of the p-type inversion layer is adjusted by the Fermi level of the p-type hydrogenated amorphous silicon（a-Si∶H）layer,which can be controlled by changing its doping level.The HIT solar cell virtually acts like a p-n homojunction solar cell and p-type inversion layer functions as the cell emitter,which dominates the performance of the solar cell.