摘要
Nanostructured silicon plays a key role in the fidds of microelectronics, optoelectronics and photonics. Since near-infrared photolummescence（PL） was first observed in nanoporous silicon at room temperature, silicon nanocrystals（Si-NCs） have attracted considerable attention due to their tunable structures and properties. Considerable efforts have recently been devoted to obtaining deeper insight in the PL emission of colloidal and solid Si-NCs and the applications of these materials.
Nanostructured silicon plays a key role in the fidds of microelectronics, optoelectronics and photonics. Since near-infrared photolummescence（PL） was first observed in nanoporous silicon at room temperature, silicon nanocrystals（Si-NCs） have attracted considerable attention due to their tunable structures and properties. Considerable efforts have recently been devoted to obtaining deeper insight in the PL emission of colloidal and solid Si-NCs and the applications of these materials.
