基于迁移率波动的MOSFET线性区域1/f噪声模型

A Novel MOSFET 1/f Noise Model Based on Mobility Fluctuation for Linear Region

统一的 1/f噪声模型 ,例如BSIM3模型 ,已经在噪声预测与分析中有着广泛的应用 ,在多数情况下有很好的效果 .然而文献 [1]中基于物理机理分析的研究表明 ,统一的 1/f噪声模型对处于线性区p MOSFET不能进行正确的描述 :当偏置电压Vgs增加时 ,该模型低估了噪声功率的增加 .据此 ,本文提出了一种基于物理机理的迁移率波动(MF) 1/f噪声模型 ,并给出了新MF模型与统一的 1/f噪声模型在线性区的仿真结果 .从仿真结果可以看出 ,新噪声模型更接近于测试的结果 .

The unified 1/ f noise model,such as BSIM3,has been widely used as noise prediction and analysis model,and it works very well in most cases.However,based on physical analysis in ,it is pointed out that the unified 1/ f noise model may not be suitable to predict the 1/ f noise for p-type MOSFETs in linear regime because it underestimates noise power so much as bias V gs increases.In this paper,a physically based expression for mobility fluctuation (MF) 1/ f noise model is derived and simulation results for the new MF model and unified 1/ f noise are presented together in linear region.The results show that the new models are in agreement with the experimental data well.