NMOSFET器件不同源、不同γ剂量率辐射损伤比较

A Comparison of Ionizing Radiation Damage in NMOSFET Device from Different Radiation Resources and Different Dose Rate ^(60)Co Gamma Rays

利用不同剂量率γ射线、低能 (小于 9MeV)质子和 1MeV电子对CC40 0 7RH、CC40 11、LC5 4HC0 4RHNMOS FET进行了辐照实验 ,结果表明 ,在 +5V偏置条件下 ,9MeV以下质子造成的损伤总是小于60 Co,而且质子能量越低 ,损伤越小 ;对于同等的吸收剂量 ,1MeV电子和60 Co造成的损伤差别不大 ;在高剂量率γ射线辐射下 ,氧化物陷阱电荷是导致器件失效的主要原因 ,在接近空间低剂量率辐射环境下 ,LC5 4HC0 4RH电路失效的主要原因是辐射感生界面态陷阱电荷 ,而CC40 0 7RH器件则是氧化物陷阱电荷 .

N-channel MOS transistors from CC4007,CC4011 and LC54HC04RH device were irradiated with different dose rate Co-60 gamma rays,lower energy protons(less then 9MeV)and 1MeV electrons.According to the result,under 5V bias conditions during radiation,the damage for protons below 9MeV was always less then Co-60.The lower the proton energy,the less the damage.Comparison of electrons to Co-60 showed that for equal absorbed doses,the damage produced was almost equivalent.At higher dose rate Co-60 gamma rays radiation environment,the oxide trapped charges by the irradiation was main reason to induce device failure.when approaching the of low dose irradiation environment,interface trapped charges by the irradiation was the main reason to induce the LC54HC04RH failure.The main reason for CC4007 device failure was the oxide trapped charges by the irradiation.