摘要
The role of deposition rate in the structural, optical and electrical properties of SnOthin films deposited by electron beam evaporation method is investigated by varying the deposition powers viz. 50, 75, and 100 W.The structural characterization of the films is done by X-ray diffraction(XRD) technique. The surface morphology of the films is studied by scanning electron microscopy(SEM). Rutherford back scattering(RBS) measurements revealed the thickness of the films ranging from 200 nm to 400 and also a change in the concentration of oxygen vacancies which is found to be the maximum in the film deposited at the lowest deposition rate. Optical absorption spectrum is recorded using the UV–V is spectroscopy and the films are found to be transparent in nature. A shift in the absorption edge is observed and is attributed to a different level of allowed energy states in conduction band minimum. The Hall effect and electrical measurements show a variation in the carrier concentrations, mobility and resistivity of the films. In order to explore a better compromise in electrical and optical properties for transparent electrode applications, skin depths calculations are also done to find the optimized values of carrier concentration and mobility.
The role of deposition rate in the structural, optical and electrical properties of SnO_2 thin films deposited by electron beam evaporation method is investigated by varying the deposition powers viz. 50, 75, and 100 W.The structural characterization of the films is done by X-ray diffraction(XRD) technique. The surface morphology of the films is studied by scanning electron microscopy(SEM). Rutherford back scattering(RBS) measurements revealed the thickness of the films ranging from 200 nm to 400 and also a change in the concentration of oxygen vacancies which is found to be the maximum in the film deposited at the lowest deposition rate. Optical absorption spectrum is recorded using the UV–V is spectroscopy and the films are found to be transparent in nature. A shift in the absorption edge is observed and is attributed to a different level of allowed energy states in conduction band minimum. The Hall effect and electrical measurements show a variation in the carrier concentrations, mobility and resistivity of the films. In order to explore a better compromise in electrical and optical properties for transparent electrode applications, skin depths calculations are also done to find the optimized values of carrier concentration and mobility.
基金
the support from IUAC,New Delhi
