摘要
β-GaOis an ultra-wide band-gap semiconductor with promising applications in UV optical detectors,Schottky barrier diodes, field-effect transistors and substrates for light-emitting diodes. However, the preparation of large β-GaOcrystals is undeveloped and many properties of this material have not been discovered yet. In this work, 2-inch β-GaOsingle crystals were grown by using an edge-defined film-fed growth method. The high quality of the crystal has been proved by high-resolution X-ray diffraction with 19.06 arcsec of the full width at half maximum. The electrical properties and optical properties of both the unintentionally doped and Si-doped β-GaOcrystals were investigated systematically.
β-Ga_2O_3 is an ultra-wide band-gap semiconductor with promising applications in UV optical detectors,Schottky barrier diodes, field-effect transistors and substrates for light-emitting diodes. However, the preparation of large β-Ga_2O_3 crystals is undeveloped and many properties of this material have not been discovered yet. In this work, 2-inch β-Ga_2O_3 single crystals were grown by using an edge-defined film-fed growth method. The high quality of the crystal has been proved by high-resolution X-ray diffraction with 19.06 arcsec of the full width at half maximum. The electrical properties and optical properties of both the unintentionally doped and Si-doped β-Ga_2O_3 crystals were investigated systematically.
