摘要
PdTe2, a member of layered transition metal dichalcogenides （TMDs）, has aroused significant research interest due to the coexistence of superconductivity and type-II Dirac fermions. It provides a promising platform to explore the inter- play between superconducting quasiparticles and Dirac fermions. Moreover, PdTe2 has also been used as a substrate for monolayer antimonene growth. Here in this paper, we report the epitaxial growth of high quality PdTe2 films on bilayer graphene/SiC（0001） by molecular beam epitaxy （MBE）. Atomically thin films are characterized by scanning tunneling microscopy （STM）, X-ray photoemission spectroscopy （XPS）, low-energy electron diffraction （LEED）, and Raman spec- troscopy. The band structure of 6-layer PdTe2 film is measured by angle-resolved photoemission spectroscopy （ARPES）. Moreover, our air exposure experiments show excellent chemical stability of epitaxial PdTe2 film. High-quality PdTe2 films provide opportunities to build antimonene/PdTe2 heterostructure in ultrahigh vacuum for future applications in electronic and optoelectronic nanodevices.
PdTe2, a member of layered transition metal dichalcogenides （TMDs）, has aroused significant research interest due to the coexistence of superconductivity and type-II Dirac fermions. It provides a promising platform to explore the inter- play between superconducting quasiparticles and Dirac fermions. Moreover, PdTe2 has also been used as a substrate for monolayer antimonene growth. Here in this paper, we report the epitaxial growth of high quality PdTe2 films on bilayer graphene/SiC（0001） by molecular beam epitaxy （MBE）. Atomically thin films are characterized by scanning tunneling microscopy （STM）, X-ray photoemission spectroscopy （XPS）, low-energy electron diffraction （LEED）, and Raman spec- troscopy. The band structure of 6-layer PdTe2 film is measured by angle-resolved photoemission spectroscopy （ARPES）. Moreover, our air exposure experiments show excellent chemical stability of epitaxial PdTe2 film. High-quality PdTe2 films provide opportunities to build antimonene/PdTe2 heterostructure in ultrahigh vacuum for future applications in electronic and optoelectronic nanodevices.
作者
李恩
张瑞梓
李航
刘晨
李更
王嘉鸥
钱天
丁洪
张余洋
杜世萱
林晓
高鸿钧
En Li;Rui-Zi Zhang;Hang Li;Chen Liu;Geng Li;Jia-Ou Wang;Tian Qian;Hong Ding;Yu-Yang Zhang;Shi-Xuan Du;Xiao Lin;Hong-Jun Gao(Institute of Physics ＆ University of Chinese Academy of Sciences,Chinese Academy of Sciences,Beijing 100190,China;Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China)
基金
Project supported by the National Natural Science Foundation of China(Grant Nos.61390501,61622116,and 61471337)
the Science Fund from the Chinese Academy of Sciences(CAS)(Grant Nos.XDPB0601 and XDPB0801)
the CAS Pioneer Hundred Talents Program,and the Beijing Nova Program(Grant No.Z181100006218023)
