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Factors affecting improvement of fluorescence intensity of quartet and doublet state of NO diatomic molecule excited by glow discharge

Factors affecting improvement of fluorescence intensity of quartet and doublet state of NO diatomic molecule excited by glow discharge
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摘要 We report on the observation of new fluorescence emission spectral transitions obtained from NO diatomic molecule in the region from ultraviolet (UV) to near infrared (NIR) in a low power glow discharge system. This glow discharge electronic excitation populates different quartet and doublet states of NO in its proximity such as the A2Z (/9 = 2), b4∑- (υ= 3), B2М (1) = 4), and X2Л (u= 33-32) states. Due to inter-system crossing, emission lines originating from these levels to lower lying states are recorded and spectral line assignments are performed. The observed systems include b4∑- a4∏, B21∏-a4∏, a4∏-X2I∏, A2∑X2∏, X2∏-X2∏ (33-15), X2∏-X2∏ (33-17), X2∏-X2∏ (33-20), and X2∏-X2∏ (33- 18). This new information will conduce to the better understanding of the interesting features of NO molecule. Such parameters that affect the recording of low density of NO molecules are also discussed In addition to the factors such as the time evolution, argon gas concentration relative to NO mixture, the percentage of NO molecular gas concentration, discharge electric current signals and discharge applied voltage are studied. Those factors would enhance the fluorescence signal intensity of NO molecules. The recent results might be significant as reference data for optimizing the glow discharge spectrometer and diagnostics of NO gas. We report on the observation of new fluorescence emission spectral transitions obtained from NO diatomic molecule in the region from ultraviolet (UV) to near infrared (NIR) in a low power glow discharge system. This glow discharge electronic excitation populates different quartet and doublet states of NO in its proximity such as the A2Z (/9 = 2), b4∑- (υ= 3), B2М (1) = 4), and X2Л (u= 33-32) states. Due to inter-system crossing, emission lines originating from these levels to lower lying states are recorded and spectral line assignments are performed. The observed systems include b4∑- a4∏, B21∏-a4∏, a4∏-X2I∏, A2∑X2∏, X2∏-X2∏ (33-15), X2∏-X2∏ (33-17), X2∏-X2∏ (33-20), and X2∏-X2∏ (33- 18). This new information will conduce to the better understanding of the interesting features of NO molecule. Such parameters that affect the recording of low density of NO molecules are also discussed In addition to the factors such as the time evolution, argon gas concentration relative to NO mixture, the percentage of NO molecular gas concentration, discharge electric current signals and discharge applied voltage are studied. Those factors would enhance the fluorescence signal intensity of NO molecules. The recent results might be significant as reference data for optimizing the glow discharge spectrometer and diagnostics of NO gas.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第8期356-363,共8页 中国物理B(英文版)
基金 Project supported by the Funds from Laser Sciences and Interactions Department,National Institute of Laser Enhanced Sciences(NILES),Cairo University,Giza,Egypt the Fund from the Department of Physics,Faculty of Science for Girls,Imam Abdulrahman Ben Faisal University(x-Dammam University) the Fund from Dammam 31441,Saudi Arabia the Physics Department of King Fahd University of Petroleum and Minerals(KFUPM),Dhahran,Saudi Arabia
关键词 fluorescence emission NO molecule quartet states intersystem crossing glow discharge fluorescence emission NO molecule quartet states intersystem crossing glow discharge
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