摘要
We propose a new type of quantum spin Hall （QSH） insulator in chemically functionalized As （110） and Sb （110） film. According to first-principles calculations, we find that metallic As （110） and Sb （110） films become QSH insulators after being chemically functionalized by hydrogen （H） or halogen （C1 and Br） atoms. The energy gaps of the functionalized films range from 0.121 eV to 0.304 eV, which are sufficiently large for practical applications at room temperature. The energy gaps originate from the spin-orbit coupling （SOC）. The energy gap increases linearly with the increase of the SOC strength λ/λ0. The Z2 invariant and the penetration depth of the edge states are also calculated and studied for the functionalized films.
We propose a new type of quantum spin Hall （QSH） insulator in chemically functionalized As （110） and Sb （110） film. According to first-principles calculations, we find that metallic As （110） and Sb （110） films become QSH insulators after being chemically functionalized by hydrogen （H） or halogen （C1 and Br） atoms. The energy gaps of the functionalized films range from 0.121 eV to 0.304 eV, which are sufficiently large for practical applications at room temperature. The energy gaps originate from the spin-orbit coupling （SOC）. The energy gap increases linearly with the increase of the SOC strength λ/λ0. The Z2 invariant and the penetration depth of the edge states are also calculated and studied for the functionalized films.
作者
Xiahong Wang
Ping Li
Zhao Ran
Weidong Luo
王夏烘;李平;冉召;罗卫东(Key Laboratory of Artificial Structures and Quantum Control,School of Physics and Astronomy,Shanghai Jiao Tong University,Shanghai 200240,China;Institute of Natural Sciences,Shanghai Jiao Tong University,Shanghai 200240,China;Collaborative Innovation Center of Advanced Microstructures,Nanjing 210046,China)
基金
Project supported by the National Natural Science Foundation of China(Grant Nos.11474197,U1632272,and 11521404)
