摘要
We discuss the random dopant effects in long channel junctionless transistor associated with quantum confinement effects. The electrical measurement reveals the threshold voltage variability induced by the random dopant fluctuation. Quantum transport features in Hubbard systems are observed in heavily phosphorus-doped channel. We investigate the single electron transfer via donor-induced quantum dots in junctionless nanowire transistors with heavily phosphorus- doped channel, due to the formation of impurity Hubbard bands. While in the lightly doped devices, one-dimensional quantum transport is only observed at low temperature. In this sense, phonon-assisted resonant-tunneling is suppressed due to misaligned levels formed in a few isolated quantum dots at cryogenic temperature. We observe the Anderson-Mott transition from isolate electron state to impurity bands as the doping concentration is increased.
We discuss the random dopant effects in long channel junctionless transistor associated with quantum confinement effects. The electrical measurement reveals the threshold voltage variability induced by the random dopant fluctuation. Quantum transport features in Hubbard systems are observed in heavily phosphorus-doped channel. We investigate the single electron transfer via donor-induced quantum dots in junctionless nanowire transistors with heavily phosphorus- doped channel, due to the formation of impurity Hubbard bands. While in the lightly doped devices, one-dimensional quantum transport is only observed at low temperature. In this sense, phonon-assisted resonant-tunneling is suppressed due to misaligned levels formed in a few isolated quantum dots at cryogenic temperature. We observe the Anderson-Mott transition from isolate electron state to impurity bands as the doping concentration is increased.
作者
Liu-Hong Ma
Wei-Hua Han
Xiao-Song Zhao
Yang-Yan Guo
Ya-Mei Dou
Fu-Hua Yang
马刘红;韩伟华;赵晓松;郭仰岩;窦亚梅;杨富华(School of Physical Engineering, Zhengzhou University;Engineering Research Center for Semiconductor Integrated Technology, Beijing Engineering Center of Semiconductor Micro-Nano Integrated Technology,Institute of Semiconductors, Chinese Academy of Sciences;School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences)
基金
Project supported by the National Key Research and Development Program of China(Grant No.2016YFA0200503)
the Program for Innovative Research Team(in Science and Technology) in University of Henan Province,China(Grant No.18IRTSTHN016)
the National Natural Science Foundation of China(Grant Nos.61376096,61327813,and 61404126)
