基于SOI岛膜结构的高温压力传感器

High Temperature Pressure Sensor Based on SOI Island Film Structure

针对绝缘体上硅（SOI）压力传感器平模结构下压敏电阻所在区域应力跨度过大而导致的线性度降低问题,采用了岛膜结构改善敏感膜片表面的应力分布,使压敏电阻能够完全布置在应力集中区,从而提高传感器的灵敏度和线性度。使用有限元分析软件对岛膜结构进行力学性能分析,根据敏感膜片表面应力分布情况确定压敏电阻最优的位置分布,并完成敏感芯片的制备。对完成的敏感芯片进行封装并进行温度-压力的复合测试,测试结果表明在19~200℃、量程2 MPa范围内,该传感器有较高的灵敏度（0.055 mV/kPa）和线性度（0.995）。

In order to resolve the problem of linearity decrease caused by excessive stress span in the region where the varistor was located under the flat mode structure of silicon-on-insulator（SOI）pressure sensors,the island film structure was used to improve the stress distribution on the sensitive film surface,then the varistor was completely arranged in the stress concentration area,thus the sensitivity and linearity of the sensor were improved.The finite element analysis software was used to analyze the mechanical properties of the island film structure,the optimal position distribution of the varistor was determined according to the stress distribution on the sensitive film surface,and the fabrication of the sensitive chip was completed.Encapsulation and temperature-pressure composite test of the fabricated sensitive chip were carried out.The test result shows that the sensor has high sensitivity（0.055 mV/kPa）and linearity（0.995）at 19-200 ℃within the range of 2 MPa.