Germanium-tin alloys： applications for optoelectronics in mid-infrared spectra

We summarize our work of the optoelectronic devices based on Germanium-tin （GeSn） alloys assisted with the Si3N4liner stressor in mid-infrared （MIR） domains. The device characteristics are thoroughly analyzed by the strain distribution,band structure, and absorption characteristics. Numerical and analytical methods show that with optimal structural pa-rameters, the device performance can be further improved and the wavelength application range can be extended to 2~5 μm in the mid-infrared spectra. It is demonstrated that this proposed strategy provides an effective technique for the strained-GeSn devices in future optical designs, which will be competitive for the optoelectronics applications in mid-infrared wavelength.