稀磁掺杂Mn_xGe_(1-x)量子点的制备及应用

Preparation and Application of Dilute Magnetic Doping of Mn_xGe_(1-x) Quantum Dots

作为一种新兴的稀磁掺杂半导体材料,Mn_xGe_(1-x)量子点的自旋电子学性能在最近几年内取得了较为重大的突破。本文针对现有Mn_xGe_(1-x)量子点的稀磁掺杂制备方法及与制备方法相关联的磁电子学性能展开论述,并详细介绍了Mn_xGe_(1-x)量子点在生长过程中Mn原子与生长表面之间的相互作用、形貌转变以及迄今为止对基于这种纳米材料进行的自旋电子学应用的尝试。最后,展望了Mn_xGe_(1-x)量子点未来研究的重点和亟待解决的问题。

As a new kind of diluted magnetic semiconductor materials,the study on spintronics properties of the MnxGe1-x quantum dots have made a great breakthrough in recent years.The current preparation method of the diluted magnetic doping MnxGe1-x quantum dots and its related magnetic properties have been well discussed.The interaction between Mn ion and growth surface,morphology evolution,and attempts for spintronics application based on such nanomaterials have also been introduced in detailed.At the end of this article,we focus on the key spot of the research and the problems that need to be solved for the application of MnxGe1-x quantum dots in the near future.