摘要
在研究功率肖特基整流管的基础上,为提高反向击穿电压、漏电流、抗浪涌能力,采用加场限环的方法,设计并制造了10 A/300 V结势垒肖特基整流管(JBS)。从有源区参数、外延材料、流片工艺、产品电参数、可靠性等方面进行了全面设计。经测试,电参数水平正向电压VF为0.85~0.856 V,反向电流IR为4~50.5μA,反向电压VR为307.5~465.2 V,抗静电水平从低温退火的6~12 kV提高到15 kV,经高温直流老化后,可靠性电参数水平满足预期的设计要求。
Based on the study of power Schottky rectifier,in view of the reverse breakdown voltage,leakage current,anti surge capacity,adopt the method with field limiting ring,the design and manufacture of 10 A/300 V Junction Barrier Schottky rectifier（ JBS）. Designed from a source area parameters,epitaxial material,chip technology,products electrical parameters,reliability,etc. Tested,electricity parameter level forward voltage VF： 0. 85 - 0.856 V,reverse current IR： 4 - 50. 5 μA,reverse voltage VR： 307. 5 - 465. 2 V,anti-static level from low temperature annealing of 6 - 12 kV to 15 kV,after high temperature aging,the level of reliability of electric parameters meet the expected design requirements.
作者
闫丽红
王永顺
刘缤璐
YAN Lihong;WANG Yongshun;LIU Binlu(School of Electronic and Information Engineering,Lanzhou Jiaotong University,Lanzhou 730070,China)
出处
《电子科技》
2018年第8期31-34,共4页
Electronic Science and Technology
基金
国家自然科学基金(61366006)
甘肃省科技支撑计划(1304GKCA012)
关键词
反向击穿电压
场限环
外延材料
流片工艺
reverse breakdown voltage
field limiting ring
epitaxial material
chip technology
