基于CMOS集成温度传感器的电路设计与仿真

Circuit Design and Simulation Based on CMOS Integrated Temperature Sensor

为提高温度传感器的测量精度,同时缩小其面积和功耗,文中设计了一种使用NPN晶体管进行温度测量的完全集成互补型金属氧化物半导体传感器。该传感器主要由偏置电路,运算放大器和热传感器电路组成。偏置电路为传感器提供偏置条件,其由启动电路和β乘法器电路组成。文中采用LTspice and Matlab进行电路设计,并在50 nm工艺下对传感器电路进行仿真,得到所设计的温度传感器在-30~125℃范围内,温度系数为5.9 m V/℃。

In order to improve the measurement accuracy of the temperature sensor and reduce its area and power consumption,this paper designs a fully integrated complementary metal oxide semiconductor sensor using NPN transistor for temperature measurement. The sensor is mainly composed of a bias circuit,an operational amplifier and a thermal sensor circuit. The bias circuit provides a bias condition for the sensor,which consists of a startup circuit and a beta multiplier circuit. In this paper,the circuit design using LTspice and Matlab,and the sensor circuit simulation under the 50 nm process,the temperature coefficient of the designed temperature sensor under the temperature range of-30 to 125 ℃ is 5. 9 mV/℃.