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K波段高效率GaAs收发一体多功能芯片 被引量:5

K-band high efficiency GaAs T/R multi-functional MMIC
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摘要 研制了一款K波段(23~25 GHz)收发一体化多功能芯片。该芯片集成了单刀双掷开关(SPDT)、接收支路低噪声放大器和发射支路高效率功率放大器。为兼顾低噪声和高效率功率特性,对电路的拓扑结构进行了优化选择和设计。在器件特征工作频点,采用开关模型、噪声模型和非线性大信号模型进行联合仿真设计。测试结果表明,该收发一体多功能芯片在23~25 GHz范围内,接收支路增益23 d B、噪声系数2.5 d B,工作电流仅为12 m A;发射支路增益为30 d B,1 d B压缩点输出功率为18.7 d Bm,功率附加效率达到30%,动态电流仅为70 m A。芯片尺寸小,仅为3.5 mm×2.5 mm。 A K-band multi-functional chip with transmitter/receiver( T/R) was reported in this study. It integrated single pole double throw( SPDT) switch,low noise receiving branch amplifier and high efficiency emission branch power amplifier. The circuit topology was chosen and optimized reasonably for striking a balance betw een low noise and high efficiency. At characteristic frequency points of the device,co-simulation was employed with sw itch,noise and nonlinear large-signal models. The test results show that from 23 GHz to 25 GHz,the gain of the receiving branch achieves 23 d B,noise figure is 2. 5 d B and DC current is12 m A; and the gain of the transmitting branch reaches 30 d B,1 d B compression output power is18. 7 d Bm,power added efficiency is 30% and dynamic current is 70 m A. Moreover,the chip size is only 3. 5 mm ×2. 5 mm.
作者 韩芹 刘会东 刘如青 曾志 魏洪涛 HAN Qin;LIU Huidong;LIU Ruqing;ZENG Zhi;WEI Hongtao(Thirteenth Institute of CETC,Shijiazhuang 430071,China)
出处 《电子元件与材料》 CAS CSCD 北大核心 2018年第7期40-45,共6页 Electronic Components And Materials
关键词 GAAS 多功能芯片 K波段 单片集成电路 噪声 效率 GaAs multi-functional chip K band MMIC noise efficiency
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