发射光谱的低温等离子体诊断

Low Temperature Plasma Diagnosis by Optical Emission Spectroscopy

采用发射光谱诊断技术研究功率对氩气和氧气激发态光强的影响,并结合光刻胶的刻蚀速率来论证这种光谱诊断的可行性,并应用该诊断方法研究极板间距及配置对等离子体放电的影响。结果表明:氩离子和氧原子激发态光强随着功率的增加呈线性增加,与电子密度和电子能量密度的相关性高达0.8 8以上,与光刻胶的刻蚀速率的相关性高达0.9 5以上;极板间距的增加可减弱发射光谱强度、降低等离子体密度,正负极板配置可增强发射光谱的强度、提高等离子体密度和光刻胶的刻蚀速率。

The effects of power on the excitation intensity of argon and oxygen were studied by optical emission spectroscopy（OES）, and the feasibility of the spectroscopic diagnosis was demonstrated by the etch rate of photoresist. The influence of electrode distance and configuration on the plasma discharge was studied by OES method. The result indicates that the excitation intensity of argon and oxygen atoms increases linearly with the increase of power. Its correlation with electron density and electron energy density is as high as 0.88 or more.while the correlation with etch rate of the photoresist is over than0.95. The increase of electrode distance leads to the decrease of optical emission intensity, and the power-ground electrode configuration can enhance the intensity of the emission spectrum,and it also can improve the plasma density and etch rate of photoresist.