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EBSD扫描步长对重构微观组织的影响研究 被引量:3

Influence of step size set in EBSD technique on the reconstructed microstructure
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摘要 电子背散射衍射(EBSD)技术所获取的数据是基于逐点扫描标定的取向信息,再经取向信息统计计算后重新生成的图像,点与点之间的距离即为扫描步长。本文以溅射靶材用钽板(Ta)为研究材料,在其他各项扫描及EBSD设置参数一致的情况下,系统研究了扫描步长的改变对重构微观组织的影响。研究发现,随着扫描步长的增大,晶粒尺寸增大,大角度晶界(>30°)占比增多,而扫描步长的改变对晶粒长径比、微区织构强度等影响较小。 The microstructure is reconstructed from the orientation data which is collected by the electron backscatter diffraction( EBSD) technique with a point-to-point step method,and the distance between adjacent two points is the step size. In this study,the sputtering target tantalum( Ta) was set as the starting material. The influence of the change of step size on the reconstructed microstructure was systematically investigatedwith the premise that all the parameters of scanning electron microscope( SEM) and EBSD remained unchanged through the investigation. The results showed that grain size and the volume of large angle boundaries increased with the increase of step size,but the change of step size has little influence on the aspect ratio and local texture of the material.
作者 柳亚辉 邓超 刘施峰 祝佳林 LIU Ya-hui;DENG Chao;LIU Shi-feng;ZHU Jia-lin(College of Materials Science and Engineering,Chongqing University,Chongqing 400044;Electron Microscopy Center of Chongqing University,Chongqing University,Chongqing 400044,China)
出处 《电子显微学报》 CAS CSCD 北大核心 2018年第3期238-243,共6页 Journal of Chinese Electron Microscopy Society
基金 国家自然科学基金资助项目(Nos.51421001 51701032)
关键词 EBSD 晶界 晶粒尺寸 微区织构 EBSD grain boundary grain size local texture
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  • 1刘庆.电子背散射衍射技术及其在材料科学中的应用[J].中国体视学与图像分析,2005,10(4):205-210. 被引量:57
  • 2高珊,郑磊.高强度高韧性X80管线钢的研制与应用[J].宝钢技术,2007(2):1-4. 被引量:12
  • 3陈超,潘春旭,傅强.采用显微硬度压痕法测量微区残余应力[J].机械工程材料,2007,31(1):8-11. 被引量:15
  • 4Wright S I, Nowell M M. EBSD image quality mapping [J]. Microscopy and Microanlysis, 2006, 12( 1 ) : 72 - 84.
  • 5Keller R R, Rosbko A, Geiss R H, Bertness K A, Quinn T P. EBSD Measurement of strains in GaAs due to oxidation of buried AIGaAs layers [ J ]. Microelectronic Engineering, 2004, 75 (1). 96- 102.
  • 6Luo J F, Ji Y, Zhong T X, Zhang Y Q. EBSD measurements of elastic strain fields in a GaN/sapphire structure [ J]. Microelectronics Reliability, 2006, 46 (1): 178-182.
  • 7FanL X, Guo D L, Ren F, Xiao X H. The use of electron backscatter diffraction to measure the elastic strain fields in a misfit dislocation-free InGaAsP/InP heterostructure[ J]. 2007, 16( 11 ) : 7301 -7305.
  • 8Wilkinson A J. Measurement Strains Using Electron Backscatter Diffraction [ M ]. Electron Backscatter Diffraction in Materials Science. New York: Kluwer Academic, 2000. 231 - 246.
  • 9Troost K Z, van der Sluis P, Gravesteijin D J. Microscale elastic-strain determination by backscatter Kikuchi diffraction in the scanning electron microscope [J]. Applied Physics Letter, 1993, 62(10): 1110- 1112.
  • 10Chevalier L, Calloch S, Hild F,Marco Y. Digital image correlation used to analyze the multiaxial behavior of rubber-like materials [ J ]. European journal of mechanics A, 2001, 20(2) : 169 - 187.

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