不同沿海仓储条件下晶体管寿命的比较与分析

The Comparison and Analysis of the Life of Transistors under Different Coastal Storage Conditions

寿命是衡量半导体器件的重要指标,主要对贮存在不同海域的晶体管的寿命差异及产生这种差异的原因进行了分析。对沿海仓储条件下的晶体管的各项参数进行了测试及分析,外推出其寿命,并对影响其寿命的相关因素进行了分析。通过对实际贮存在不同海域的晶体管进行测试及寿命的外推,得出了贮存在旅顺、舟山、湛江的晶体管的平均寿命分别为1.4×10~5h(15.9年)、2.8×10~5 h(31.9年)、1.5×10~5 h(约17年)。分析得出的结论是:太阳辐射最大强度和年辐射总量是影响晶体管寿命的最关键因素,温度亦是决定晶体管寿命长短的关键因素,而盐雾浓度和湿度则相互作用对晶体管的寿命也有一定的影响。

Life is an important indicator to measure the semiconductor device. The difference in the life span of transistors stored in different sea areas and the reasons for this difference are analyzed. The parameters of the transistors under the coastal storage condition are tested and analyzed. And the life of the transistors is extrapolated. Besides, the related factors affecting their life are analyzed. By testing and extrapolating the transistors stored in different sea areas, it can be concluded that the average life of the transistors stored in Lvshun, Zhoushan and Zhanjiang are1.4 ×105 h（ 15.9 years）, 2.8 ×105 h（ 31.9 years） and 1.5 ×105 h（ about 17 years）. Through analysis, it is concluded that the maximum intensity of solar radiation and total annual radiation are the most important factors that affect the life of the transistors. Temperature is also the key factor that determines the life of the transistors. Besides, the interaction between salt spray concentration and humidity has a certain impact on the life of the transistors.