平面硅异质结太阳电池的光吸收增强的研究

Optical Absorption Enhancement of Planar Silicon-Heterojunction Solar Cells

钙钛矿/硅叠层太阳电池可以充分利用太阳光谱,提高光电转换效率。平面硅异质结太阳电池可以作为叠层电池的底电池,其性能直接影响叠层电池的性能表现。采用传统反应热蒸发技术,在低温(170℃)条件下制备了掺锡氧化铟薄膜,并在170℃的氧气氛围下后退火处理,对ITO薄膜的特性进行了详细的表征和分析。结果表明:后退火工艺改善了ITO的结晶特性,使得材料的光学特性和电学特性得到明显提高,将其应用于平面硅异质结太阳电池,短路电流密度得到极大提高,尤其红外光响应改善明显。引入MgF_2薄膜作为减反射层,进一步增强了电池的光响应,转换效率达到19.04%。

Perovskite/silicon-heterojunction solar cell is a very promising cell structure for using the solar spectrum efficiently and hence improving the energy conversion efficiency. Planar silicon-heterojunction solar cell can be used as the bottom of tandem solar cells,its performance directly affects the performance of tandem solar cells. Tin-doped indium oxide（ITO） films were prepared by traditional reaction thermal evaporation techniques at low temperature（170 ℃） and then annealed in an oxygen atmosphere. The properties of ITO thin films were characterized and analyzed in detail. The results show that the postannealing process improves the crystallinity of ITO,and the optical and electrical properties of the material are enhanced obviously. Applying it to a planar silicon-heterojunction solar cell,the short circuit current density is greatly improved, especially the infrared response of the solar cell is improved obviously. The MgF2 film is introduced as the anti-reflective coating,and the optical absorption of the solar cell is further enhanced. The conversion efficiency of the solar cell reaches 19. 04%.