摘要
针对大功率变流器中绝缘栅双极型晶体管(IGBT)开关特性中由杂散电感引起的关断电压尖峰问题,首先利用Simplorer软件对应用中的IGBT模块进行建模,搭建单桥臂仿真电路,通过对比在不同杂散电感下IGBT开通关断瞬时的电压与电流波形,对这一问题进行分析与研究,然后提出一种直流侧与电容组两端布局的优化方法,降低了线路杂散电感的总量,使IGBT关断特性中的电压尖峰得到了有效抑制,同时缩短了IGBT的开关时间。最后通过一套功率为1.3 MVA的三相两电平逆变器进行实验,实验与仿真结果的对比证明了该优化方法的有效性。
Aiming at the voltage spike caused by the stray inductance in the insulated gate bipolar transistor(IGBT)switching characteristics in the high-power converter.Firstly, the IGBT module and the single-arm simulation circuit is built by Simplorer software.This problem is analyzed and studied by comparing the voltage and current waveforms of the IGBT turn-on/off at the different stray inductors, and then a optimized method is proposed that the direct current side and the capacitor group are both ends of the layout to reduce the total amount of stray inductance on the line,so that the voltage spike of the IGBT turn-off characteristics has been effectively suppressed and then shorten the IGBT switching time.Finally,a three-phase two-level inverter with 1.3 MVA power is used to experiment.The comparison between the experimental and simulation results shows the effectiveness of the proposed optimized method.
作者
朱艺锋
郑景乐
田野
ZHU Yi-feng, ZHENG Jing-le, TIAN Ye(Henan Polytechnic University, Jiaozuo 454000, China)
出处
《电力电子技术》
CSCD
北大核心
2018年第7期82-84,共3页
Power Electronics
基金
国家自然科学基金(U1504518)
河南省教育厅科技研究重点项目(14A470005)
关键词
绝缘栅双极型晶体管
杂散电感
开关特性
insulated gate bipolar transistor
stray inductance
switch characteristics