低温煅烧及Y^(3+)掺杂对BiVO_4微观形貌和光催化活性的影响

Effects of Low Temperature Calcination and Y^(3+) Doping on Micromorphology and Photocatalytic Activity of BiVO_4

采用一步水热法结合低温煅烧制备了BiVO_4和Y-BiVO_4半导体光催化材料,并通过XRD、SEM、FT-IR、UVVis DSR和PL进行结构分析与性能表征。测试结果表明,在掺杂Y3+后,BiVO_4的晶型由四方相向单斜相转变,且出现十面体晶粒。光催化活性测试结果表明,通过Y3+掺杂和低温煅烧均可提升BiVO_4对RhB的降解率;煅烧后所得Y-BiVO_4显现出较高的光催化活性,是未煅烧BiVO_4降解率的2倍,在120min内对RhB的降解率可达86.6%。

BiVO4 and Y-BiVO4 semiconductor photocatalytic materials were prepared by one-step hydrothermal method and low temperature calcination,and the structure and properties were characterized and analyzed by XRD,SEM,FT-IR,UV-Vis DSR and PL.The test results show that the crystal form of Y^3＋-doped BiVO4 is transformed from tetragonal phase to monoclinic phase with decahedral grains.Photocatalytic activity test results show that both Y^3＋doping and low temperature calcination could enhance the degradation rate of BiVO4 to RhB.The calcined Y-BiVO4 exhibits higher photocatalytic activity,which is 2 times the degradation rate of uncalcined BiVO4,and the degradation rate of RhB is 86.6% within 120 min.