2KIM Y H, HAN M K, HAN JI, etal. Effect of metal- lic composition on electrical properties of solution-pro- cessed indium-gallium-zinc-oxide thin-film transistors [J]. IEEE Transactions on Electron Devices, 2010, 57 (5): 1009-1014.
3AIM-Spice. Circuit simulation program by AIM-software [ EB/ OL] (2014-11-1) [2016-04-01]. www. aimspice, com.
4HA S H, KANG D H, KANG I, et al. Channel length dependent bias-stability of self-aligned eoplanar a-IGZO TFTs [ J l. Journal of Display Technology, 2013, 9 (12): 985-988.
5RESENDIN L, ESTRADA M, CERDEIRA. New proce- dure for the extraction of a-Si : H TFTs madel parameters in the subthreshold region [ Jl. Solid-State Electronics, 2003, 47 (8): 1351-1358.
6POWELL M J, EASTON B C, NICHOLLS D H. An- nealing and light induced changes in the field effect con- ductance of amorphous silicon [ J 1. Journal of Applied Physics, 1982, 53 (7): 5068-5078.
7TANG Z, PARK M S, JIN S H, et al. Parameter ex- traction of short-channel a-Si : H TFT including self-hea- ting effect and drain current nonsaturation [ J ]. IEEE Transactions on Electron Devices, 2010, 57 (5): 1093-1101.
8MERCKEL G, ROLLAND A. A compact CAD model for amorphous silicon thin film transistors simulation-I, d. c. analysis [ J ]. Solid-State Electronics, 1996, 39 (8): 1231-1239.
