多晶金刚线切割硅片制绒绒面的分析与应用

Analysis and application of texturing features on polycrystalline diamond wire cutting silicon

针对添加剂法制备多晶金刚线电池片在产线上存在的制绒反射率波动大和丝网印刷难度大的问题,改进制绒工艺和丝网印刷方式。结果表明,制绒后的硅片反射率在22.43%,绒面陷阱坑横向半径在1.5μm^2.0μm,丝网采用线痕垂直于细栅线的方向进行印刷,可以实现多晶金刚线电池片转化效率提升0.05%,不良率降低2.5%。

In this paper,in view of the two problems of texturing reflectance fluctuation and screen printing difficulty in the production line of polycrystalline diamond wire cells,the texturing process and the screen printing direction are improved. The results show that the silicon reflectivity at 22. 43%,texture trap pit horizontal radius between 1. 5 to 2. 0 um,and screen printing using the silicon wafer line mark is perpendicular to the thin grid line,the conversion efficiency of the solar cell can be increased by 0. 05% and the defective rate decreased by 2. 5%.