后摩尔时代大规模集成电路器件与集成技术

Device and integration technologies for VLSI in post-Moore era

本文梳理了微纳电子器件技术从等比例缩小的技术路线发展到以功耗降低为核心的后摩尔时代技术路线的过程,阐述了从等比例缩小到功耗缩小的微纳电子器件技术发展趋势,并对后摩尔时代大规模集成电路的新器件与工艺技术,包括Fin FET、围栅晶体管、新型隧穿器件、单片三维集成工艺等进行了较为系统的分析,试图为大规模集成电路技术的持续发展提供新的视野和观点.

We herein review the technology transition from the scaling-driven technical roadmap to the powerdriven post-Moore roadmap,focusing on the primary trend in micro/nanoelectronics devices.The novel devices and process integration technologies in post-Moore era,such as the Fin FET,gate-all-around transistor,tunneling FET,and the sequential 3 D integration process were systematically analyzed to provide new insights into the everlasting evolution of VLSI technology.