GaAs基霍尔传感器的研究进展

Research Progress of GaAs-Based Hall Sensor

霍尔传感器作为磁传感器的重要成员,广泛应用于汽车电子和无线通信等电子系统。与以第一代半导体材料硅、锗等为基底的霍尔传感器相比,Ga As基霍尔传感器具有更高的磁场分辨率、灵敏度和稍好的温度特性。概述了Ga As材料在霍尔传感器领域的优势及霍尔单元形状的研究进展;综述了采用外延工艺制备的单外延结构的Ga As基霍尔传感器和异质结构的Ga As基霍尔传感器的研究进展;详细介绍了电压偏移消除技术的研究进展,包括结构的优化、正交对消补偿和旋转电流技术;最后对Ga As基霍尔传感器的发展趋势进行了展望。

As an important role of the magnetic sensor,Hall sensor is widely used in automotive electronics,wireless telecommunications and other electronic systems. Compared with the Hall sensor based on the first-generation semiconductor Si, Ge, etc., the Ga As-based Hall sensor has higher magnetic field resolution,higher sensitivity and better temperature characteristics. The advantages of Ga As materials in the field of Hall sensor and the research progress of the Hall element shape are summarized. The research progress of Ga As-Based Hall sensor with a single epitaxial structure and the Ga Asbased Hall sensor with a heterostructure prepared by epitaxial process are reviewed. The research progress of the voltage offset cancellation techniques is introduced in detail,including the structure optimization,orthogonal cancellation compensation and spinning current technique. Finally,the development trend of Ga As-based Hall sensor is prospected.