一种具有阶梯变掺杂基区的SiC光控晶体管

SiC Optically Controlled Transistor with Step-Shaped Gradually Doped Base

提出并研究了一种具有阶梯变掺杂基区的Si C光控晶体管。通过Silvaco TACD计算机仿真平台,对具有阶梯变掺杂基区的Si C光控晶体管与常规均匀掺杂基区的Si C光控晶体管的性能进行了对比分析。结果表明,阶梯变掺杂基区结构可以产生加速载流子输运的感生电场,缩短基区渡越时间,改善器件开通性能。该结构提高了Si C光控晶体管的电流增益并缩短开通时间,但同时会损失部分关断性能。仿真结果显示,当变掺杂区浓度梯度为4.5×10^20cm^-4时,电流增益与开通时间改善幅度分别达到18%和32%,关断时间增加了约22%。

The Si C optically controlled transistor with step-shaped gradually doped base was proposed and studied. By using the Silvaco TACD computer simulation platform,the performances of the Si C optically controlled transistor with step-shaped gradually doped base and the Si C optically controlled transistor with conventional uniform base were compared and analyzed. The results indicate that the stepshaped gradually doped base can induce an electric field to accelerate the carrier transport,reduce the base transit time,and improve the turn-on performance of the device. The structure improves the current gain and reduces the turn-on time of Si C optically controlled transistor,meanwhile,losing partial turn-off performance. The simulation results show that when the concentration gradient of the gradually doped base is 4. 5×10^20 cm^-4,the improvements of current gain and turn-on time are 18% and 32%,respectively,and the turn-off time improves about 22%.