Si_3N_4/FePd/Si_3N_4薄膜的晶体结构和磁性能研究

Crystal Structure and Magnetic Property of Si_3N_4/FePd/Si_3N_4 Thin Films

采用磁控溅射的方法制备了Si_3N_4/FePd/Si_3N_4三层膜,研究了非磁性材料Si_3N_4作为插入层对磁记录FePd薄膜结构与磁性能的影响。结果表明,热处理后Si_3N_4分布在FePd纳米颗粒之间,抑制了FePd晶粒的生长,与纯FePd薄膜相比,Si_3N_4/FePd/Si_3N_4薄膜的颗粒明显得到细化;通过添加Si_3N_4层,FePd薄膜的晶体学参数c/a从0.960减小到0.946,表明Si_3N_4可以有效促进FePd薄膜的有序化进程,同时提升了矫顽力和剩磁比,分别提高到249 k A/m、0.86;随着600℃退火时间的进一步延长,添加Si_3N_4的薄膜磁性没有迅速下降,在较宽的热处理时间范围内磁性能保持在比较高的水平,提高了抗热影响的能力。Si_3N_4作为插入层对FePd薄膜的磁性能具有较大的提升作用,这对磁记录薄膜的发展具有重要意义。

Si3N4/FePd/Si3N4 trilayer films were prepared by magnetron sputtering. The effect of Si3N4 insert as a non-magnetic material on structure and magnetic properties of FePd films was investigated. The results show that Si3N4 particles distribute between the FePd nanoparticles after heat treatment, which inhibit the growth of FePd grains. Compared with pure FePd films, the grains of Si3N4/FePd/Si3N4 thin films are obviously refined. By adding Si3N4 insert, the crystallographic parameters c/a of FePd films decrease from 0.960 to 0.946, indicating that Si3N4 content could effectively promote the ordering process of FePd films and improve the coercivity and remanence ratio. The coercivity and remanence ratio are increased to 249 k A/m and 0.86, respectively. With the further increase of the annealing time at 600℃, the magnetic property of the Si3N4-doped FePd thin films does not decrease rapidly, and its relatively high magnetic properties maintain over a wide range of annealing time, which indicate that the thermal resistance of FePd thin films are obviously improved. Si3N4 insert plays a great role in promoting the magnetic properties of FePd thin films, which is significant for the development of magnetic recording film materials.