基于光诱导二氧化钒薄膜相变的太赫兹波调制材料研究

Research on Terahertz Modulator Based on Phase Transition of The Photoinduced Vanadium Dioxide Film

太赫兹技术在许多领域有非常广泛的应用前景,但高灵敏度的太赫兹探测和调制器件的缺乏限制了其应用范围,尤其是具备超快响应特性的太赫兹波调制器件更为缺乏。文中通过仿真模拟对基于二氧化钒(VO2)薄膜和超材料相结合的光激发快速主动式太赫兹波调制材料进行研究,发现通过改变二氧化钒薄膜厚度可以优化调制深度,改变材料周期结构参数可以改变太赫兹调制频率。这些结果为快速主动式太赫兹波调制器件的设计提供了思路。

Terahertz（THz） technology has shown extensive applications in many fields,but applications are limited duo to the lack of highly sensitive THz detectors or modulators,especially lack of the THz modulator with ultrafast response. In this paper,photoinduced fast active THz wave modulation materials based on vanadium dioxide（VO_2） film combined with metamaterial are designed and simulated. It is found that the modulation depth can be optimized by changing the thickness of VO_2 film,while the modulated THz frequency can be adjusted by changing the parameters of the periodic structure. These results provide a possible idea for the design of fast active THz wave modulators.