摘要
Through a combination of electronic structure, chemical bonding and mechanical property investigations, anisotropic electrical and mechanical properties, and damage tolerant ability of MAB phases CrsSi3 B and HfsSi3B are predicted. The anisotropic electrical conductivity is due to the anisotropic distribution of Cr in CrsSiaB and Hf in HfsSi3B, which mainly contribute to the electrical conductivity. The anisotropic mechanical properties are underpinned by the anisotropic chemical bonding within the crystal structures of CrsSi3B and HfsSi3B. The high stiffness is determined by the strong covalent-ionic Crl--B--Crl and Crl--Si bonds in CrsSi3B and the ionic-covalent Hfl--B--Hfl and Si--B bonds in HfsSi3B; while the low shear deformation resistance is attributed to the presence of metallic Cr--Cr, Hf--Hf and Si--Si bond. Based on the low Pugh＇s ratio, CrsSi3B and Hfs Si3B are predicted tolerant to damage. The possible cleavage plane is （0001） and the possible slip systems are 〈1 100〉1{11 20} and 〈11 20〉1{0001} for both CrsSi3B and HfsSi3B.
Through a combination of electronic structure, chemical bonding and mechanical property investigations, anisotropic electrical and mechanical properties, and damage tolerant ability of MAB phases CrsSi3 B and HfsSi3B are predicted. The anisotropic electrical conductivity is due to the anisotropic distribution of Cr in CrsSiaB and Hf in HfsSi3B, which mainly contribute to the electrical conductivity. The anisotropic mechanical properties are underpinned by the anisotropic chemical bonding within the crystal structures of CrsSi3B and HfsSi3B. The high stiffness is determined by the strong covalent-ionic Crl--B--Crl and Crl--Si bonds in CrsSi3B and the ionic-covalent Hfl--B--Hfl and Si--B bonds in HfsSi3B; while the low shear deformation resistance is attributed to the presence of metallic Cr--Cr, Hf--Hf and Si--Si bond. Based on the low Pugh＇s ratio, CrsSi3B and Hfs Si3B are predicted tolerant to damage. The possible cleavage plane is （0001） and the possible slip systems are 〈1 100〉1{11 20} and 〈11 20〉1{0001} for both CrsSi3B and HfsSi3B.
基金
supported by the Natural Sciences Foundation of China under Grant No.51672064 and No.U1435206
Beijing Municipal Science&Technology Commission under Grant number Z151100003315012 and D161100002416001
