高功率密度3600A/4500V压接型IGBT研制

Development of High Power Density 3600A/4500V Press-pack IGBT

该文基于柔性直流输电对大容量压接型绝缘栅双极晶体管（insulated gate bipolar transistor,IGBT）的应用需求,首创大尺寸方形陶瓷压接外壳、21×21mm2大尺寸高性能IGBT及其配套快速恢复二极管（fast recovery diode,FRD）芯片、独特结构的压接子单元,大幅度降低了芯片损耗、提高了单芯片电流容量;解决压接封装中的压力均衡、芯片均流等关键技术难题,成功研制高功率密度3600A/4500V压接型IGBT,具有导通损耗低、开关能力强、双面散热、失效短路的优点,功率容量与功率密度提高到一个新的水平,满足柔性直流输电应用需求。

Based on voltage source converter based high voltage direct current transmission （VSC-HVDC） application requirements for high power press-pack IGBT, this paper presented a big-size rectangle ceramic housing with its internal sub-assembly design, 21x21mm2large size and high performance insulated gate bipolar transistor （IGBT） chip and its matched 21 x 21mm2 fast recovery diode （FRD） chip for the first time. As a result the chip loss has been decreased a lot, and its current capacity has been dramatically increased. The existing crucial technical challenges of uniform pressure distribution, uniform chip current distribution, etc. have been solved. The first 3600A/4500V high power density press-pack IGBT was introduced with advantages of low on-state loss, strong switching capability, double-sided cooling, short-circuit failure mode, etc. which is suitable for VSC-HVDC applications and set a new benchmark of power capacity and power density for press-pack IGBTs.