SF6过热产生H2S的激光光谱法快速分析

Rapid analysis of trace-level H2S produced by overheated SF6 using laser absorption spectroscopy

对SF6局部过热模拟设备中分解产生的微量特征组分H2S,采用快速可调谐半导体激光吸收光谱（Tunable Diode Laser Absorption Spectroscopy,简称TDLAS）技术,进行了实时检测.结果表明：SF6开始分解产生H2S的温度可低至文献报道的下限温度350℃以下,且反应几乎是瞬时完成.H2S生成量与加热温度之间并不是简单的递增关系,而是存在一定的温度窗口对应H2S浓度峰值.这些发现可为SF6分解特性研究以及气体绝缘设备故障诊断提供参考.

The trace level hydrogen sulfide（H_2S）in sulfur hexafluoride（SF_6）,a known characteristic component resulted from the instant overheating of SF_6,is analyzed using a rapid analysis technique,tunable diode laser absorption spectroscopy（TDLAS）.The results show that H_2S can be detected starting from temperatures below 350 ℃,the lowest possible decomposition temperature reported by literature,and the decomposition takes place almost instantly after overheating.The produced H_2S is not simply proportional to the heating temperature,but shown with concentration maxima for some given temperatures.These findings can provide helpful insights for the fault diagnostics of SF_6 insulated electrical equipment.