摘要
Dielectronic recombination is an important process in high temperature plasmas. In the present work, the KLn （n=L, M, N and O） DR resonance strengths of He-like to O-like xenon ions are measured at the Shanghai electron beam ion trap using a fast electron beam energy scanning method. The experiment uncertainty reaches about 6% with significant improvement of statistics. A relativistic configuration interaction calculation is also made. Theoretical results agree with the experiment results within 15% in most cases.
Dielectronic recombination is an important process in high temperature plasmas. In the present work, the KLn （n=L, M, N and O） DR resonance strengths of He-like to O-like xenon ions are measured at the Shanghai electron beam ion trap using a fast electron beam energy scanning method. The experiment uncertainty reaches about 6% with significant improvement of statistics. A relativistic configuration interaction calculation is also made. Theoretical results agree with the experiment results within 15% in most cases.
基金
supported by the National Key Research and Development Program of China under Grant No.2017YFA0402300
