期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

a-IGZO/IZO厚度比对TFT特性的影响研究

Study on Influence of a-IGZO/IZO Thickness Ratio on TFT Characteristics
下载PDF
导出
摘要 利用Silvaco TCAD软件中的Atlas模块,对底栅结构的双有源层a-IGZO/IZO薄膜晶体管(TFT)进行了仿真与模拟,研究了双有源层厚度比对TFT特性的影响。结果表明,该TFT的特性与有源层的厚度比密切相关。在给定参数条件下,当有源层的厚度比为20∶20时,该TFT的电学性能最优。阈值电压、亚阈值摆幅分别为-2.05 V、91 mV/decade,最大开关电流比为4.12×1014。双有源层a-IGZO/IZO TFT的场效应迁移率可达20.2cm2/V·s,优于单有源层a-IGZO TFT。 The bottom-gate a-IGZO/IZO thin film transistor（TFT）of double active layers was simulated by Atlas module of Silvaco TCAD,and then the influence of the thickness ratio of double active layers on TFT characteristics were studied.The results of the simulation indicated that the TFT characteristics were closely related to the thickness ratio of active layers.Based on the given material parameters,it was found that the electrical properties of TFT could be optimized when the thickness ratio of active layers was 20∶20.The threshold voltage and subthreshold swing were-2.05 V,91 mV/decade respectively,and the maximum switching current ratio was4.12×1014.Especially,the field effect mobility could reach 20.2 cm2/V·s,which was superior to that of the single active layer a-IGZO TFT.
作者 潘东 向超 殷波 李勇男 汤猛 钟传杰 PAN Dong;XIANG Chao;YIN Bo;LI Yongnan;TANG Meng;ZHONG Chuanjie(School of Internet of Things Engineering,Jiangnan University,Wuxi,Jiangsu 214122,P.R.China;SIPPR Engineering Group Co.,Ltd.,Zhengzhou 450007,P.R.China)
机构地区 江南大学物联网工程学院 机械工业第六设计研究院有限公司
出处 《微电子学》 CAS CSCD 北大核心 2018年第4期533-536,547,共5页 Microelectronics
基金 国家自然科学基金资助项目(60776056)
关键词 a-IGZO a-IZO 双有源层 异质结 态密度 a-IGZO a-IZO double active layers heterojunction density of state
分类号 TN321.5 [电子电信—物理电子学]
  • 相关文献

参考文献1

二级参考文献14

  • 1Liu P T, Chou Y T, Teng L F, Li F H, Fuh C S, Shieh H P D. Ambient stability enhancement of thin-film transistor with InGaZnO capped with InGaZnO:N bilayer stack channel layers. IEEE Electron Device Letters, 2011, 32(10): 1397-1399.
  • 2Marrs M A, Moyer C D, Bawolek E J, Cordova R J, Trujillo J,Raupp G B, Vogt B D. Control of threshold voltage and saturation mobility using dual-active-layer device based on amorphous mixed metal-oxide-semiconductor on flexible plastic substrates. IEEE Transactions on Electron Devices, 2011, 58(10): 3428-3434.
  • 3Kim S I, Kim C J. High performance oxide thin film transistors with double active layers. In: Proceedings of IEEE International Electron Devices Meeting, 2008.
  • 4Kim S I, Park J S, Kim C J, Park J C, Song I, Park Y S. High reliable and manufacturable gallium indium zinc oxide thin-film transistors using the double layers as an active layer. In: Journal of the Electrochemical Soeiety, 2009, 156(3): H184 H187.
  • 5Maeng W J, Park J S, Kim H S, Lee K H, Park K B, Son K S, Kim T S, Kim E S, Ham Y N, Ryu M, Lee S Y. Photo and thermal stability enhancement of amorphous Hf-In-Zn-O thin-film transistors by the modulation of back channel composition. Applied Physics Letters, 2011, 98(7): 073503.
  • 6Kim C E, Moon P. Density-of-states modeling of solution-processed InGaZnO thin-film transistors. IEEE Electron Device Letters, 2010, 31(10): 1131-1133.
  • 7Kim Y, Bae M, Kim W, Kong D, Jung H K, Kim H, Kim S, Kim D M, Kim D H. Amorphous InGaZnO thin-film transistors--part I: complete extraction of density of states over the full subband-gap energy range. IEEE Transactions on Electron Devices, 2012, 59(10): 2689-2698.
  • 8Fung T C, Chuang C S, Chen C, Abe K, Cottle R, Townsend M, Kumomi H, Kanicki J. Two-dimensional numerical simulation of radio frequency sputter amorphous In-Ga-Zn-O thin-film transistors. Journal of Applied Physics, 2009, 106(8): 084511.
  • 9Bae H, Choi H, Oh S, Kim D H, Bae J, Kim J, Kim Y H, Kim D M. Extraction technique for intrinsic subgap DOS in a-IGZO TFTs by de-embedding the parasitic capacitance through the photonic C-V measurement. IEEE Electron Device Letters, 2013, 34(1): 57-59.
  • 10Bae M, Lee K M, Cho E S, Kwon H I, Kim D M, Kim D H. Analytical current and capacitance models for amorphous indium- gallium-zinc-oxide thin-fi~,m transistors. IEEE Transactions on Electron Devices, 2013, 60(10): 3465-3473.

共引文献2

微电子学
2018年 第4期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部