圆柱形阳极层霍尔推力器的内磁极刻蚀研究

Sputter Etching of Inner Magnetic Pole in Cylindrical Anode Layer Hall Thruster:A Simulation and Experimental Study

本文重点研究引起圆柱形阳极层霍尔推力器的内磁极刻蚀的入射离子能量和入射角分布,仿真中考虑入射离子能量和入射角分布大小的变化,进而得到相应的刻蚀速率。由仿真结果可知,放电电压400 V,阳极表面磁场强度175×10^(-4)T,中心最大刻蚀速率为3×10^(-9)m/s。磁场提高到205×10^(-9)T时,中心附近刻蚀速率增加到原来的1.3倍左右,边沿处的刻蚀速率基本相同。在175×10^(-9)T的磁场强度时,把放电电压从400提高到600 V时,中心附近的刻蚀速率从3×10^(-9)提高到12.1×10^(-9)m/s,刻蚀速率增加了4倍多。此仿真结果与150 h的实验结果一致。此研究方法和结果有助于圆柱形阳极层霍尔推力器的设计和寿命评估工作。

Herein,we addressed the problem of sputter-etching of inner magnetic pole in cylindrical anode layer Hall thruster. The ion sputter-etching was mathematically modeled,numerically simulated with PIC software and experimentally evaluated. The influence of the discharge voltage and magnetic field above the anode surface on the etching rate of inner magnetic pole was investigated by calculating the energy/angle distributions of the incident ions. The simulated results show that depending on the discharge voltage and magnetic field,the strongest etchingrate at the center is much higher than the almost un-changed etching-rate on the edge. For example,at 400 V,as the magnetic field increases from 175 to 205 × 10^-9 T,the fastest etching-rate at the center increase from 3 × 10^-9 to3. 9 × 10^-9 m/s; at 175 × 10^-9 T,as the voltage increases from 400 to 600 V,the highest etching-rate increases at the center from 3 × 10^-9 to 12. 1 × 10^-9 m/s. The simulated and measured results were in good agreement.