7Hefner A R, Blackburn D L. An analytical model for the steady-state and transient characteristics of the power insulate gate bipolar transistor[J]. Solid-State Electronics, 1988, 31(10): 1513-1532.
8Hefner A R. An improved understanding for the transient operation of the power insulate gate bipolar transistor (IGBT)[J]. IEEE Trans. on Power Electronics, 1990, 6(4): 459-468.
9Hefner A R. Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT)[J]. IEEE Trans. on Industry Applications, 1990, 26(6): 995-1005.
10Hefner A R, Diebolt D M. An experimentally verified IGBT model implemented in the saber circuit simulator[J]. IEEE Trans. on Power Electronics, 1994, 9(5): 532-542.
