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高速InGaAs光电探测器γ辐照实验研究 被引量:3

Research on γ Irradiation of High-Speed InGaAs Photodetector
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摘要 高速InGaAs光电探测器在天基平台中的应用正逐渐广泛,研究空间辐射环境对高速InGaAs光电探测器性能的影响有着重要意义。采用实时测试法,研究了不同剂量及不同剂量率的γ辐照对高速InGaAs光电探测器响应度、3dB带宽及暗电流特性的影响,通过器件性能实时测试分析发现,器件的暗电流随辐照剂量或剂量率的增加而增大,而响应度、3dB带宽基本不变。 As increasing demands for high-speed InGaAs photodetector in space application,it is more significant to research the effect of space radiation on high-speed InGaAs photodetector.Using the real-time measurement,the variation in the responsivity,3 dB bandwidth,dark current of high-speed InGaAs photodetector irradiated with differentγradiation dose and rate was studied.By anaylzing the real-time measurement data,it shows that the dark current rise with the increasing of radiation dose or rate,but the responsivity and saturation optical power slightly change under differentγradiation dose and rate.The results indicate thatγradiation has less effect on high-speed InGaAs photodetector.
出处 《半导体光电》 CAS 北大核心 2018年第4期486-489,共4页 Semiconductor Optoelectronics
关键词 高速InGaAs探测器 Γ辐照 在线测试 high-speed InGaAs photodetector γ irradiation real-time measurement
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  • 1黄杨程,曹光明,刘大福,龚海梅.InGaAs红外探测器的γ辐照研究[J].功能材料与器件学报,2005,11(1):68-70. 被引量:4
  • 2张建新,陈永平,梁平治.硅光电二极管钝化膜的抗辐射性能研究[J].激光技术,2007,31(1):83-85. 被引量:3
  • 3唐恒敬,吕衍秋,张可锋,吴小利,韩冰,徐勤飞,刘洪洋,李雪,龚海梅.空间遥感用InGaAs短波红外探测器[J].激光与光电子学进展,2007,44(5):42-49. 被引量:12
  • 4T N Krabach,C Staller,S Dejewski,et al.InGaAs detectors for miniature infrared instruments[C].SPIE,1993,1874:214-223.
  • 5Moy J P,Hugon X,Chabbal J,et al.3000 InGaAs photodiode multiplexed linear array for the spot 4 SWIR channel[C].SPIE,1989,1107:137-151.
  • 6Hoogeveen Ruud W M,Var Der A Ronald J,Goede Albert P H.Extended wavelength InGaAs infrared (1.0-2.4 μm)detector arrays on SCIAMACHY for spacebased spectrometry of the Earth atmosphere[J].Infrared Physics & Technology,2001,42:1-16.
  • 7Kozlowski L J,Tennant W E,Zandian M,et al.SWIR staring FPA performance at room temperature[C].SPIE,1996,2746:93-100.
  • 8Van Uffelen M.Wavelength dependence of the response of Si and InGaAs pin photodiodes under gamma radiation[J].Proc. SPIE, 2004,5554:132-143.
  • 9Chu M L,Hou S,Huffman T,et al.Radiation hardness studies of VCSELs and PINs for the optolinks of the Atlas SemiConductor Tracker[J]. Nuclear Instruments & Methods in Physics Research,2007,579(5):795-800.
  • 10Bourqui M L.Reliability investigations of 850nm silicon photodiodes under proton irradiation for space application[J].Microelectronic Reliabilty,2008,48(6):1202-1207.

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